Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Patent
1997-06-27
2000-06-27
Utech, Benjamin L.
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
438736, 438717, 216 47, H01L 2100
Patent
active
060806788
ABSTRACT:
The method for etching an organic anti-reflective coating (ARC) film includes the steps of forming an ARC film on an etching-objective layer, coating a photoresist layer on the organic ARC film, patterning the photoresist layer, and etching the organic ARC film with the photoresist pattern as a mask using a plasma of a gas mixture of O.sub.2 and SO.sub.2. The SO.sub.2 prevents erosion of the patterned photoresist layer.
REFERENCES:
patent: 5447598 (1995-09-01), Mihara et al.
Anisotropic etching of polymers in SO2/02 plasmas: Hypotheses on surface mechanism, Michel Pons, et al, Unite CNRS, CNET-CNS, France-Telecom, B.P. 98, 38243 Meylan Cedex, France, (Received Aug. 17, 1993, accepted for publication Jan. 6, 1994), J. Appl. Phys. 75 (9), May 1, 1994, 1994 American Institute of Physics, pp. 4709-4715.
"Plasma Development of a silylated bilayer resist: Effects of etch chemistry on critical control and feature profiles"; Hutton et al.; pp. 2366-2371; J. Vac. Sci. Tech. B 13(6). (Nov. 1995)-ISN:0734-211x.
"Comparison of Dry Development Techniques using O.sub.2 and SO.sub.2 /O.sub.2 Low-Pressure Plasmas"; Pons et al.; pp. 991-996; Jpn. J. Appl. Phys., Part 1, (1994), 32(2).
Goudreau George
LG Semicon Co. Ltd.
Utech Benjamin L.
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