Method for etching and for forming a contact hole using thereof

Details Method for etching and for forming a contact hole using thereof Method for etching and for forming a contact hole using thereof

2005-12-28

2008-03-04

Vinh, Lan (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S750000, C438S760000

Reexamination Certificate

active

07338911

ABSTRACT:
A method for forming a structure formed by etching which is typified by a contact hole in the semiconductor and a method for manufacturing a display device using the structure. The etching method includes at least, forming an organic mask having a first opening portion and a second opening portion by patterning an organic film which includes either one of an organic film and a film with the addition of organic solvent and is located on a constituent part to be etched, and forming a transformed organic mask by dissolving the organic mask in contact with organic solvent and reflowing.

REFERENCES:
patent: 2003/0186170 (2003-10-01), Yamashita
patent: 10268353 (1998-10-01), None
patent: 2000-164584 (2000-06-01), None

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