Method for etching an insulating material

Details Method for etching an insulating material Method for etching an insulating material

1996-09-30

1998-10-13

Jones, Deborah

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

438748, 438756, 438757, 216102, 216 96, 252 795, 252 791, C23F 100

Patent

active

058211705

ABSTRACT:
A method for etching aluminum containing layers. A layer (13) of aluminum nitride is formed on a semiconductor substrate (11). The layer (13) of aluminum nitride is etched using a dilute ammonium hydroxide solution that is diluted with water such that the ammonium hydroxide solution has one part of ammonium hydroxide to at least fifteen parts of water. The dilute ammonium hydroxide solution is showered onto the semiconductor substrate and forms an aluminum hydroxide layer. The aluminum hydroxide layer is dissolved by excess water in the dilute aluminum hydroxide solution and rinsed from the semiconductor substrate (11).

REFERENCES:
patent: 4239661 (1980-12-01), Muraoka et al.
patent: 4943540 (1990-07-01), Ren et al.
patent: 5127984 (1992-07-01), Hua et al.
patent: 5447874 (1995-09-01), Grivna et al.
patent: 5484740 (1996-01-01), Cho
patent: 5512518 (1996-04-01), Cho et al.

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