Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-08-16
2011-08-16
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C438S725000, C438S736000, C430S313000
Reexamination Certificate
active
07998872
ABSTRACT:
A method of dry developing a multi-layer mask having a silicon-containing anti-reflective coating (ARC) layer on a substrate is described. The method comprises forming the multi-layer mask on the substrate, wherein the multi-layer mask comprises a lithographic layer overlying the silicon-containing ARC layer. A feature pattern is then formed in the lithographic layer using a lithographic process, wherein the feature pattern comprises a first critical dimension (CD). Thereafter, the feature pattern is transferred from the lithographic layer to the silicon-containing ARC layer using a dry plasma etching process, wherein the first CD in the lithographic layer is reduced to a second CD in the silicon-containing layer and a first edge roughness is reduced to a second edge roughness in the silicon-containing ARC layer.
REFERENCES:
patent: 7563723 (2009-07-01), Abatchev et al.
patent: 2005/0070111 (2005-03-01), Kushibiki et al.
patent: 2005/0277289 (2005-12-01), Wagganer et al.
patent: 2006/0024945 (2006-02-01), Kim et al.
Balasubramaniam Vaidyanathan
Luong Vinh Hoang
Nishino Masaru
Tokyo Electron Limited
Vinh Lan
Wood Herron & Evans LLP
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