Method for etching a semiconductor substrate and etching system

Details Method for etching a semiconductor substrate and etching system Method for etching a semiconductor substrate and etching system

1997-05-27

1999-02-23

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

156345, 216 91, 216 92, 438745, H01L 2100

Patent

active

058743669

ABSTRACT:
The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.

REFERENCES:
patent: 4350562 (1982-09-01), Bonu
"Spin Etcher for Removal of Backside Depositions" (Gaulhofer), 400 Solid State Technology, vol. 34, No. 5, May 1991, pp. 57-58 and 219.
Japanese Patent Abstract No. 3-6823 (Kamibayashi), dated Jan. 14, 1991.
Japanese Patent Abstract No. 2-94435 (Miyamoto), dated Sep. 29, 1988.

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