Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1995-09-01
1999-02-16
Niebling, John
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438 47, 438718, H01L 2100, H01L 21302
Patent
active
058720227
ABSTRACT:
A method of etching a III-V compound semiconductor uses an etching gas including the group V element of the III-V compound semiconductor substrate layer while keeping the III-V compound semiconductor layer at a temperature higher than the crystal growth temperature of the III-V compound semiconductor. Etching using this method provides a higher degree of controllability than wet etching. In addition, because no etching solution is employed, the etching method can be employed in a crystal growth apparatus. Further, because an element of the III-V compound semiconductor layer is employed in the etching gas, incorporation of residual impurities can be prevented, keeping the etched surface clean.
REFERENCES:
patent: 4706101 (1987-11-01), Nakamura et al.
patent: 4948751 (1990-08-01), Okamoto et al.
patent: 4980314 (1990-12-01), Strege
patent: 5266518 (1993-11-01), Binsma et al.
patent: 5284791 (1994-02-01), Sakata et al.
patent: 5316967 (1994-05-01), Kaneno et al.
patent: 5468343 (1995-11-01), Kitano
patent: 5541950 (1996-07-01), Kizuki et al.
patent: 5556804 (1996-09-01), Nagai
Chui et al, "Surface roughness during chemical beam etching and its remedy by enhanced cation diffusion", Appl. Phys. Lett., 65 (4), pp. 448-450, 1994.
Ghandhi, Sorab K., "VLSI Fabrication Principles Silicon and Gallium Arsenide", John Wiley and Sons, pp. 662-685, 1994.
Pak et al, "Vapor-Phase Etching Of InP Using Anhydrous HCl and PH.sub.3 Gas", Journal of the Electrochemical Society, 1986, pp. 2204-2205 Month Unknown.
Caneau et al, "Etching Of InP By HCl In An OMVPE Reactor", Journal of Crystal Growth, vol. 107, 1991, pp. 203-208 Month Unknown.
Agnello et al, "In-Situ Etching Of InP By A Low Pressure Transient HCl Process", Journal of Crystal Growth, vol. 73, 1985, pp. 453-459 Month Unknown.
Epler et al., "In situ laser patterned desorption of GaAs quantum wells for monolithic multiple wavelength diode lasers", Applied Physics Letters, vol. 54, No. 18, Mar. 6, 1989, pp. 881-883.
Colas et al., "In situ Definition Of Semiconductor Structures By Selective Area Growth And Etching", Applied Physics Letters, vol. 59, No. 16, Oct. 1991, pp. 2019-2021.
Kato Manabu
Motoda Takashi
Takemi Masayoshi
Lebentritt Michael S.
Mitsubishi Denki & Kabushiki Kaisha
Niebling John
LandOfFree
Method for etching a semiconductor method for fabricating semico does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for etching a semiconductor method for fabricating semico, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for etching a semiconductor method for fabricating semico will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2061749