Method for etching a semiconductor material without altering flo

Details Method for etching a semiconductor material without altering flo Method for etching a semiconductor material without altering flo

1994-08-01

1996-11-12

Tung, T.

Etching a substrate: processes

Nongaseous phase etching of substrate

With measuring, testing, or inspecting

1566251, 1566261, 216 83, 216 84, 216 99, H01L 2102

Patent

active

055736807

ABSTRACT:
A method of etching a generally planar surface of a semiconductor material to reveal flow pattern defects on the surface, by placing the material in a canted position, ranging from about 5.degree. to about 35.degree. from vertical, such that the generally planar surface of the material faces upwardly. The material is then immersed into a stagnant etchant solution. The surface of the material is etched such that bubbles nucleating at flow pattern defects on the surface of the canted material are released directly into the otherwise stagnant etchant solution.

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