Method for etching a metal layer in a semiconductor device

Details Method for etching a metal layer in a semiconductor device Method for etching a metal layer in a semiconductor device

2006-05-30

2006-05-30

Gravini, S. (Department: 3749)

Drying and gas or vapor contact with solids

Process

With nondrying treating of material

C257S349000, C134S022100

Reexamination Certificate

active

07051454

ABSTRACT:
A method for etching a metal layer on which an oxide-based ARC layer is coated in a semiconductor device comprises the step of performing a dry cleaning process by using a Cl2/CHF3based gas, after dry cleaning the ARC layer by using the oxide-based gas. As a result, the etching rates of the center area and the edge area are substantially same.

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