Method for etching a deep groove in a silicon substrate

Details Method for etching a deep groove in a silicon substrate Method for etching a deep groove in a silicon substrate

1992-11-13

1994-01-25

Fourson, George

Fishing, trapping, and vermin destroying

437 67, H01L 2176

Patent

active

052815501

ABSTRACT:
In a method for etching a deep groove in a silicon substrate, an oxide mask is delineated according to the shape of the desired groove. The photoresist which served to form the oxide mask is removed. A new photoresist layer is deposited and etched to define a photoresist mask overlapping the edges of the oxide mask. The wafer is immersed into a chemical bath for etching the silicon to form the desired groove, partially extending beneath the oxide mask. After rinsing, the wafter is immersed into a chemical bath for etching the silicon oxide to remove the oxide cap lying over the groove and a portion of the oxide layer projecting over the substrate beyond the edges of the groove.

REFERENCES:
patent: 4465532 (1984-08-01), Fukano
patent: 4563227 (1986-01-01), Sakai et al.
patent: 4663832 (1987-05-01), Jambotkar
L. M. Elijah, et al., "Etching Technique for Minimum Undercutting" IBM Technical Disclosure Bulletin, vol. 14, No. 9, Feb. 1972, p. 2607.

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