Method for etching a compound semiconductor, a semiconductor las

Details Method for etching a compound semiconductor, a semiconductor las Method for etching a compound semiconductor, a semiconductor las

1999-03-16

2000-10-03

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

372 44, H01L 2100

Patent

active

061272019

ABSTRACT:
An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogen. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas).gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.

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