Semiconductor device manufacturing: process – Chemical etching – Having liquid and vapor etching steps
Patent
1997-02-07
1999-10-19
Kunemund, Robert
Semiconductor device manufacturing: process
Chemical etching
Having liquid and vapor etching steps
438712, 438714, 438718, 438935, 216 63, 216 64, 216 67, 216 69, H01L 2120
Patent
active
059688459
ABSTRACT:
An etching method for performing dry-etching on a III-V group compound semiconductor or a II-VI group compound semiconductor in a dry-etching apparatus comprising a plasma source for creating a plasma of density of about 10.sup.10 cm.sup.-3 or greater, using a mixed gas containing a gas including a halogen element and a gas including nitrogon. The etching conditions are as follows: (a flow rate of the gas containing said halogen gas)/(a flow rate of said nitrogen gas) .gtoreq.1; and an internal pressure during etching reaction is about 1 mTorr or greater.
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Adachi Hideto
Chino Toyoji
Kidoguchi Isao
Kumabuchi Yasuhito
Kunemund Robert
Matsushita Electric - Industrial Co., Ltd.
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