Method for etching

Details Method for etching Method for etching

1998-02-10

1999-11-02

Breneman, R. Bruce

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

216108, C23F 116

Patent

active

059763965

ABSTRACT:
Method for etching metal oxide films, especially tin oxide on a substrate in which a metal (Zn) is deposited on said film and etching is performed by a mixture of an acid, such as hydrochloric acid (HCl) and a metal dissolution agent, such as ferric chloride. The hydrochloric acid reacts with the zinc to produce active hydrogen which reduces the tin oxide to tin, which in turn is etched with the hydrochloric acid.

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Walter Mathews, "Memory Array Made With Resistors", Monday, Jan. 9, 1967, Electronics News.
Judy Mann, et al. "Glass--the Magic Liquid", The Clock, Mar./Apr. 1997, pp. 8,9,10,26 and 27.
Feldman Technology Corporation, Press Release, Oct. 1995, 2pp.
C.A. David, et al., "High Speed Fixed Memories Using Large Scale Integrated Resistor Matrices", pp. 91-94.

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