Method for estimating threshold voltage of semiconductor device

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185300, C365S185180, C365S185280, C365S185290

Reexamination Certificate

active

07660164

ABSTRACT:
A method is provided, which can improve the efficiency of device design by estimating the variation of threshold voltage according to the pulse widths of applied voltage for a semiconductor device in mass product.

REFERENCES:
patent: 6687648 (2004-02-01), Kumar et al.
patent: 7038482 (2006-05-01), Bi
patent: 2004070671 (2004-08-01), None
patent: 2004070677 (2004-08-01), None
patent: 2004070678 (2004-08-01), None
H. Bachhofer et al., Transient conduction in multidielectric silicon-oxidenitride-oxide semiconductor structures, Mar. 1, 2001, Journal of Applied Physics, vol. 89, No. 5, 2791-2800.

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