Method for estimating the thickness of layer coated on wafer

Semiconductor device manufacturing: process – With measuring or testing

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438 15, 438 17, G01R 3126, H01C 2166

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active

060805951

ABSTRACT:
A method for estimating the thickness of a desired layer coated on a wafer includes steps of (a) forming a plurality of compared layers having the same composition of the desired layer, (b) measuring the thickness of each of the plurality of compared layers, (c) estimating a factor affecting the thickness due to a solid content in the plurality of compared layers according to the thickness of the plurality of compared layers, and (d) calculating the thickness of the desired layer coated on the wafer by introducing the factor. The desired layer is a photoresist layer formed by a spin coater. The plurality of compared layers in the step (a) are formed at different spinning rates of the spin coater. The factor is estimated by a linear regression method, and the linear regression method is used to obtain an equation representing the relation between the thickness of the plurality of compared layers and each corresponding spinning rate. The equation is ##EQU1## where w is the each spinning rate, t is the thickness of each compared layer, A is a constant, and B is the factor.

REFERENCES:
patent: 4497108 (1985-02-01), Kurosawa
patent: 5223080 (1993-06-01), Ohta et al.
patent: 5949927 (1999-09-01), Tang

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