Method for establishing an electrical field by thinning an impla

Details Method for establishing an electrical field by thinning an impla Method for establishing an electrical field by thinning an impla

1995-05-19

1996-12-17

Thomas, Tom

Fishing, trapping, and vermin destroying

437974, 437 53, H01L 21265

Patent

active

055852831

ABSTRACT:
A thinned backside illuminated charge-coupled imaging device has improved quantum efficiency by providing a sharp ion implant distribution profile (20) disposed at the rear surface (22) of the device. The sharp ion implant distribution profile (20) is formed using ion implantation at a beam energy potential of between 100-150 keV, which forms an electric field beneath the surface of the device. The ion distribution profile (20) is brought to the surface (22) of the device by removing silicon (18) from the rear surface (22), using a polishing technique wherein the device is lapped with colloidal silica abrasive to controllably remove silicon down to the level of the ion implantation profile (20).

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