Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1992-06-30
1994-11-08
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257655, 377 57, 377 60, 377 63, H01L 2978, H01L 2906
Patent
active
053629787
ABSTRACT:
A thinned backside illuminated charge-coupled imaging device has improved quantum efficiency by providing a sharp ion implant distribution profile (20) disposed at the rear surface (22) of the device. The sharp ion implant distribution profile (20) is formed using ion implantation at a beam energy potential of between 100-150 keV, which forms an electric field beneath the surface of the device. The ion distribution profile (20) is brought to the surface (22) of the device by removing silicon (18) from the rear surface (22), using a polishing technique wherein the device is lapped with colloidal silica abrasive to controllably remove silicon down to the level of the ion implantation profile (20).
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Denson-Low Wanda K.
Hille Rolf
Hughes Aircraft Company
Saadat Mahshid
Sales Michael W.
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