Static information storage and retrieval – Floating gate – Particular biasing
Patent
1998-05-27
1999-05-04
Mai, Son
Static information storage and retrieval
Floating gate
Particular biasing
3651853, G11C 1604
Patent
active
059010908
ABSTRACT:
A flash Electrically-Erasable Programmable Read-Only Memory (EEPROM) includes a plurality of field effect transistor memory cells each having a source, drain, floating gate and control gate, and a power source for supplying a plurality of voltages to the cells. A controller controls the power source to apply at least one erase pulse to the cells. Then, at least one overerase correction or "soft programming" pulse is applied to the cells during which the source, drain and control gate voltages of the cells are such that the threshold voltages of overerased cells will be increased, but least erased cells will not be disturbed. The overerase correction pulses thereby tighten the threshold voltage distribution. A source to substrate bias voltage is applied for the duration of the overerase correction pulses which reduces the background leakage of the cells to a level at which the overerase correction operation can be effectively performed, even in applications with low supply voltages.
REFERENCES:
patent: 5237535 (1993-08-01), Mielke
patent: 5508959 (1996-04-01), Lee
patent: 5546340 (1996-08-01), Hu
patent: 5642311 (1997-06-01), Cleveland et al.
patent: 5844847 (1998-12-01), Kobatake
Bill Colin S.
Chen John
Chen Vei-Han
Gutala Ravi P.
Haddad Sameer S.
Advanced Micro Devices
Alexander David G.
Mai Son
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