Method for erasing data of NAND flash memory device

Details Method for erasing data of NAND flash memory device Method for erasing data of NAND flash memory device

2007-06-29

2009-12-08

Le, Thong Q (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185220, C365S185110, C365S185190

Reexamination Certificate

active

07630255

ABSTRACT:
A method for erasing data of a NAND flash memory device including memory cell blocks may include using a first erase voltage applied to memory cells of a block to be erased. A first verification may be performed to verify erased states of the memory cells using a first verify voltage different than a second verify voltage. Memory cells that have not passed the first verification process are classified as a first group and a verification is performed on memory cells that have passed the first verification using the second verify voltage. Memory cells that have passed the second verification are classified as a second group and memory cells that have not passed the second verification are classified as a third group. Then data of the memory cells of the three groups are erased using first, second and third step voltages and first, second and third erase voltages, respectively.

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