Method for erasing a memory cell

Details Method for erasing a memory cell Method for erasing a memory cell

2005-05-03

2005-05-03

Ho, Hoai (Department: 2818)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185200, C365S185290, C365S194000

Reexamination Certificate

active

06888757

ABSTRACT:
A method for erasing a bit of a memory cell in a non-volatile memory cell array, the method comprising applying an erase pulse to at least one bit of at least one memory cell of the array, waiting a delay period wherein a threshold voltage of the at least one memory cell drifts to a different magnitude than at the start of the delay period, and after the delay period, erase verifying the at least one bit to determine if the at least one bit is less than a reference voltage level.

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