Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2008-02-07
2010-02-23
Ho, Hoai V (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185050, C365S185290, C365S185330
Reexamination Certificate
active
07668013
ABSTRACT:
A flash memory cell is of the type having a substrate of a first conductivity type having a first region of a second conductivity type at a first end, and a second region of the second conductivity type at a second end, spaced apart from the first end, with a channel region between the first end and the second end. The flash memory cell has a plurality of stacked pairs of floating gates and control gates with the floating gates positioned over portions of the channel region and are insulated therefrom, and each control gate over a floating gate and insulated therefrom. The flash memory cell further has a plurality of erase gates over the channel region which are insulated therefrom, with an erase gate between each pair of stacked pair of floating gate and control gate. In a method of erasing the flash memory cell, a pulse of a first positive voltage is applied to alternating erase gates (“first alternating gates”). In addition, a ground voltage is applied to erase gates other than the first alternating gates (“second alternating gates”). In a second method to erase the flash memory cell, a pulse of a first positive voltage is applied to the first alternating gates and a negative voltage is applied to the second alternating gates and to all control gates.
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Chern Geeng-Chuan Michael
Fan Der-Tsyr
Hu Yaw Wen
Pabustan Jonathan
Sheen Ben
DLA Piper (LLP) US
Ho Hoai V
Silicon Storage Technology, Inc.
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