Method for epitaxial production of semiconductor silicon carbide

Details Method for epitaxial production of semiconductor silicon carbide Method for epitaxial production of semiconductor silicon carbide

1978-02-27

1979-04-03

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

23294R, 156603, 156610, 156DIG64, 252 623C, 423345, H01L 21203, H01L 2136

Patent

active

041475720

ABSTRACT:
A method of producing epitaxial semiconductor monocrystal materials of silicon carbide with the silicon carbide crystals being grown by crystallizing sublimed silicon carbide vapors.

REFERENCES:
patent: 2854364 (1958-09-01), Lely
patent: 3228756 (1966-01-01), Hergenrother
patent: 3236780 (1966-02-01), Ozarow
patent: 3275415 (1966-09-01), Chang et al.
patent: 3291657 (1966-12-01), Sirtl
patent: 3493444 (1970-02-01), Sirtl et al.
patent: 3577285 (1971-05-01), Rutz
patent: 3615930 (1971-10-01), Knippenberg et al.
Cuomo et al., "Growing Large Area Silicon Carbide . . . Crystals", I.B.M. Tech. Discl. Bull., vol. 17, No. 9, Feb. 1975, pp. 2819-2820.

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