Single-crystal – oriented-crystal – and epitaxy growth processes; – Forming from vapor or gaseous state – With decomposition of a precursor
Reexamination Certificate
2006-09-15
2008-07-29
Hiteshew, Felisa C (Department: 1792)
Single-crystal, oriented-crystal, and epitaxy growth processes;
Forming from vapor or gaseous state
With decomposition of a precursor
C117S084000, C117S089000, C117S092000
Reexamination Certificate
active
07404858
ABSTRACT:
A method for epitaxial growth of silicon carbide using chemical vapor deposition (CVD) is provided. This method utilizes halogenated carbon precursors and control of the gas-phase interaction of halogen-containing intermediate chemical products involving silicon and carbon, which ensures quality and homogeneity across the silicon carbide crystals. It also ensures a possibility to achieve device-quality epitaxial layers at lower growth temperatures as well as on on-axis or low off-angle substrate surfaces. The growth method can be applied to forming SiC device regions of desirable shape and dimensions by restricting the growth into windows formed in non-silicon carbide region on the top of SiC substrate. Application of the methods described herein will greatly benefit the production of high quality silicon carbide materials and devices.
REFERENCES:
patent: 5591492 (1997-01-01), Hirai et al.
patent: 6402836 (2002-06-01), Leycuras
patent: 6767783 (2004-07-01), Casady et al.
patent: 6814801 (2004-11-01), Jenny et al.
patent: 6872637 (2005-03-01), Pickering et al.
patent: 2001/0015170 (2001-08-01), Kitabatake
Powell, J. A. and Will, H.A., “Epitaxial Growth of 6H SiC in the Temperature Range 1320-1390° C,” J. Appl. Phys., vol. 44, No. 11, pp. 5177-5178, 1973.
Nishino, S. et al., “Epitaxial Growth of SiC on α-SiC Using Si2Cl6+C3H8+H2 System,” Mater. Sci. For., vols. 264-268, pp. 139-142, 1998.
Yamashita, A. et al., “Homoepitaxial Chemistry Vapor Deposition of 6H-SiC at Low Temperatures on {0114} Substrates,” Jpn. J. Appl. Phys., vol. 31, pp. 3655-3661, 1992.
Xie, Z. Y. et al., “Polytype Controlled SiC Epitaxy on On-axis 6H-SiC(0001) by Adding HCI during Growth,” Electrochemical and Solid-State Letters, 3(8), pp. 381-384, 2000.
Koshka, Y. et al., “Homoepitaxial Growth of 4H-SiC Using CH3Cl Carbon Precursor,” Mater. Sci. For., vols. 483-485, pp. 81-84, 2005.
Ikoma, K. et al., “Heteroepitaxial Growth of β-SiC on Si (111) by CVD Using a CH3Cl-SiH4-H2 Gas System,” J. Electrochem. Soc., vol. 138, No. 10, pp. 3028-3031, 1991.
Gao, Y. et al., “Low-temperature Chemical-vapor Deposition of 3C-SiC Films on Si (100) Using SiH4-C2H4-HCl-H2,” J. Crystal. Growth, 191, pp. 439-445, 1998.
Jeong, J. K. et al., “Low Temperature 4H-SiC Epitaxial Growth on 4H-SiC (1120) and (1100) Faces by Organometallic Chemical Vapor Deposition,”.
J. Electrochem. Soc., vol. 149, No. 9, pp. G526-G531, 2002.
Hiteshew Felisa C
McCandless Kristin L.
Mississippi State University
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