Method for epitaxial growth of semiconductor crystal by using ha

Details Method for epitaxial growth of semiconductor crystal by using ha Method for epitaxial growth of semiconductor crystal by using ha

1993-08-20

1995-11-28

Kunemund, Robert

Single-crystal, oriented-crystal, and epitaxy growth processes;

Forming from vapor or gaseous state

With decomposition of a precursor

117 99, 117102, 117103, C30B 2514

Patent

active

054698065

ABSTRACT:
Epitaxial growth is carried out to form crystal such as GaAs, Si, etc. by using GaCl, SiCl.sub.2, etc. In the epitaxial growth, Cl atoms are left on the crystal growth surface. The Cl atoms are removed in the form of HCl molecules by vibrationally-excited H.sub.2 molecules.

REFERENCES:
patent: 3901746 (1975-08-01), Boucher
patent: 3925119 (1975-12-01), Philbrick et al.
Zha et al., "The Production of Vibrationally Excited Hydrogen Molecules", J. Applied Physics, vol. 67(2), Jan. 15, 1990, pp. 604-610.
"GaAs Atomic Layer Epitaxy by Hydride VPE", Japanese Journal of Applied Physics, vol. 25, No. 3, Mar. 1986, pp. L212-L214, Ushi et al.

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