Metal treatment – Process of modifying or maintaining internal physical... – Chemical-heat removing or burning of metal
Patent
1979-09-11
1980-10-07
Rutledge, L. Dewayne
Metal treatment
Process of modifying or maintaining internal physical...
Chemical-heat removing or burning of metal
29571, 29576E, 29580, 29589, 156649, 156656, 156662, 357 15, 357 16, 357 61, 357 65, 357 67, 357 89, H01L 21203, H01L 21441
Patent
active
042266491
ABSTRACT:
A method of growing high-quality, super-abrupt, thin-film epitaxial layers independent of a GaAs substrate. An elemental semiconductor of germanium is used to initiate growth of an active material, typically doped n-type. A semi-insulating layer or n+ layer is grown on the n-type active material. Subsequent to growth of the semi-insulating layer, a thin cap of germanium is deposited on the composite. Gold is deposited onto the germanium cap to form an eutectic-alloy layer with the germanium. The alloy is formed and the composite is bonded to a metal, glass, or ceramic substrate and the semiconductor (germanium) is removed by etching and the n-layer is finally etched to provide a clean-up and to tailor the layer to a desired thickness. Subsequent steps are employed to form desired structures such as field-effect transistors or Schottky-barrier devices.
REFERENCES:
patent: 3368125 (1968-02-01), Pasierb
patent: 3699401 (1972-10-01), Tietjen et al.
patent: 3981073 (1976-09-01), Dully
patent: 4000020 (1976-12-01), Gartman
patent: 4021767 (1977-05-01), Nonaka et al.
patent: 4118857 (1978-10-01), Wong
patent: 4186410 (1980-01-01), Cho et al.
patent: 4188710 (1980-02-01), Davey et al.
Anderson et al., "Smooth and Continuous Ohmic Contacts . . . Ge Films", J. pplied Phys., vol. 49, No. 5, May 1978, pp. 2998-3000.
Christou Aristos
Davey John E.
Crane Melvin L.
Rutledge L. Dewayne
Saba W. G.
Schneider Philip
Sciascia R. S.
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