Method for epitaxial growth of compound semiconductor using MOCV

Details Method for epitaxial growth of compound semiconductor using MOCV Method for epitaxial growth of compound semiconductor using MOCV

1987-11-20

1989-08-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG25, 148DIG41, 148DIG48, 148DIG57, 148DIG72, 148DIG110, 148DIG94, 156613, 437 19, 437111, 437133, 437173, 437936, 437942, 437963, 427 531, H01L 21205

Patent

active

048596256

ABSTRACT:
A method for epitaxial growth of compound semiconductor containing three component elements, two component elements thereof being the same group elements, in which three kinds of compound gases each containing different one of the three component elements are cyclically introudced, under a predetermined pressure for a predetermined period respectively, onto a substrate enclosed in an evacuated crystal growth vessel so that a single crystal thin film of the compound semiconductor is formed on the substrate.

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