Method for epitaxial deposition

Details Method for epitaxial deposition Method for epitaxial deposition

1979-06-27

1981-07-21

Smith, John D.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

156612, 156613, 156614, 427 86, H01L 2120

Patent

active

042796695

ABSTRACT:
A method of epitaxial deposition comprises arranging semi-conductor discs and source material in two spaced planes in a reaction vessel, controlling the temperatures of the source material and the semi-conductor discs separately and introducing a gaseous medium into the reaction vessel to provide an equilibrium condition in which material is moved from the source material and deposited on the semi-conductor discs.
The invention also includes an apparatus suitable for carrying out the method.

REFERENCES:
patent: 3089788 (1963-05-01), Marinaie
patent: 3316130 (1967-04-01), Dash et al.
patent: 3345209 (1967-10-01), Cheroff et al.
patent: 3428500 (1969-02-01), Maeda
patent: 3493444 (1970-02-01), Sirtl et al.
patent: 3589936 (1971-06-01), Tramposch
patent: 3692572 (1972-09-01), Strehlow
Boss et al., "Epitaxial Crystal Growth", IBM TDB, 5, No. 12, May, 1963.
Nicoll, "The Use of Close Spacing in Chemical-Transport Systems for Growing Epitaxial Layers of Semiconductors", Journal of Electrochemical Soc. 110, No. 11, pp. 1165-1167, Nov. 1963.

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