Method for enlarging a nano-structure

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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C438S750000, C438S752000, C216S099000

Reexamination Certificate

active

07569491

ABSTRACT:
A method and system for fabricating nano-scale structures, such as channels (i.e., nano-channels) or vias (i.e., nano-vias. An open nano-structure, is formed in a substrate. Thereafter, an optional conformal material film may be deposited within and over the nano-structure using a first deposition process condition, and then the open nano-structure is closed off to form a closed nano-structure using a second deposition process condition, including one or more process steps.

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International Search Report issued in Application No. PCT/US2007/072322, mailed Nov. 3, 2008.
Written Opinion issued in Application No. PCT/US2007/072322, mailed Nov. 3, 2008.

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