Method for enhancing the growth rate of a silicon dioxide layer

Details Method for enhancing the growth rate of a silicon dioxide layer Method for enhancing the growth rate of a silicon dioxide layer

1996-06-06

1997-07-15

Pianalto, Bernard

Coating processes

Direct application of electrical, magnetic, wave, or...

Sonic or ultrasonic

4274301, 437225, B06B 120

Patent

active

056481284

ABSTRACT:
A liquid phase deposition method involves a reaction mixture composed of a hydrosilicofluoric acid aqueous solution supersaturated with silicon dioxide, and a semiconductor substrate disposed therein. The reaction mixture is treated with an ultrasonic oscillation at a frequency ranging between 20 and 100 KHz and at a temperature ranging between 10.degree. and 50.degree. C. for accelerating the growth rate of a silicon dioxide layer formed on the semiconductor substrate.

REFERENCES:
C.F. Yeh, C.L. Chen, and G.H. Lin, "The Physicochemical Properties and Growth Mechanism of Oxide (SiO.sub.2-x F.sub.x) by Liquid Phase Deposition with H.sub.2 O Addition Only", J. Electochem. Soc., vol. 141, No. 11, 3177 (1994). (no month avail.).
T.H. Fan, S.S. Lin, and C.F. Yeh, "Leakage current Conduction Mechanism of Liquid Phase Deposited (LPD) SiO.sub.2 Film", Extended Abstracts of 1995 International Conference on Solid State Devices and Materials, Osaka, 1995, pp. 596-598. (no month avail.).

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