Method for enhancing the crystallization rate of high purity amo

Details Method for enhancing the crystallization rate of high purity amo Method for enhancing the crystallization rate of high purity amo

1974-11-22

1979-03-20

McCarthy, Helen

Compositions: coating or plastic

Coating or plastic compositions

Metal-depositing composition or substrate-sensitizing...

106 735, 106 55, 423344, C04B 3558

Patent

active

041452240

ABSTRACT:
High purity, fine Si.sub.3 N.sub.4 powder produced by the vapor phase reaction of SiCl.sub.4 with NH.sub.3 is amorphous. The crystallization rate of the amorphous powder is enhanced by heating the powder while in intimate contact with a titanium containing material, for example, TiN codeposited with the Si.sub.3 N.sub.4 by the simultaneous reaction of TiCl.sub.4 with NH.sub.3.

REFERENCES:
patent: 2618565 (1952-11-01), Nicholson
patent: 3110589 (1963-11-01), Bechtold
patent: 3211527 (1965-10-01), Forsyth
patent: 3253886 (1966-05-01), Lamprey et al.
patent: 3352637 (1967-11-01), Heymer et al.
Mazdiyasni, K. S.-"Synthesis, Characterization, and Consolidation of Si.sub.3 N.sub.4 Obtained from Ammonolysis of SiCl.sub.4 "-J AM Cer Soc 56 (12) (1973) pp. 628-633.
Crandall, W. B. et al., "Preparation and Evaluation of Si-Al-O-N" IIT Research Institute-Jun. 1973-Prepared for Aerospace Research Labs, USAFAD-A201-997, pp. 8-10, 39 and 42.

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