Method for enhancing growth of SiO.sub.2 in Si by the implantati

Details Method for enhancing growth of SiO.sub.2 in Si by the implantati Method for enhancing growth of SiO.sub.2 in Si by the implantati

1988-04-15

1990-04-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 24, 437239, 437240, H01L 21473

Patent

active

049200763

ABSTRACT:
A method for enhancing the conversion of Si to SiO.sub.2 in a directional fashion wherein steam or wet oxidation of Si is enhanced by the prior implantation of Ge into the Si. The unique advantages of the Ge impurity include the directional enhancement of oxidation and the reduction in thermal budget, while at the same time, Ge is an electrically inactive impurity.

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