Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Compound semiconductor
Reexamination Certificate
2006-09-08
2009-08-18
Picardat, Kevin M (Department: 2822)
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Compound semiconductor
C438S036000, C438S485000, C257S079000, C257S103000
Reexamination Certificate
active
07575947
ABSTRACT:
A method for growing a semi-polar nitride semiconductor thin film via metalorganic chemical vapor deposition (MOCVD) on a substrate, wherein a nitride nucleation or buffer layer is grown on the substrate prior to the growth of the semi-polar nitride semiconductor thin film.
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Baker Troy J.
DenBaars Steven P.
Haskell Benjamin A.
Iza Michael
Nakamura Shuji
Gates & Cooper LLP
Japan Science and Technology Agency
Picardat Kevin M
The Regents of the University of California
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