Method for enhancing electron mobility in GaAs

Details Method for enhancing electron mobility in GaAs Method for enhancing electron mobility in GaAs

1981-06-15

1983-05-17

Roy, Upendra

Metal treatment

Compositions

Heat treating

148187, 357 61, 357 63, 357 91, H01L 21265

Patent

active

043838693

ABSTRACT:
The electron mobility in an active layer on a semi-insulating substrate is enhanced by initially performing a high energy implantation of an element which is inert in the semi-insulating material. Donor ions are then implanted so as to form the active layer in that area of the substrate in which the high energy implantation was performed, and the substrate is annealed.

REFERENCES:
patent: 3925106 (1975-12-01), Ku
Donnelly et al., Solid State Electronics, 20 (1977) 273.
Yeo et al., J. Appl. Phys. 51 (1980) 5785.
Rao et al., J. Appl. Phys. 49 (1978) 3898.
Stoneham et al., J. Electronic Materials, 9 (1980) 371.
Pedrotti et al., J. Appl. Phys. 51 (1980) 5781.
Stolte in Ion Implantation in S/C, 1976 ed. Chernow et al., Plenum, N.Y. pp. 1 and 9.
Favennec et al., Solid St. Electronics, 21 (1978) 705.
Ion Implantation of Sulfur and Silicon in GaAs, S. G. Liu et al., RCA Review, vol. 41, 1980, pp. 227-262.

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