Method for encapsulating a semiconductor diode

Details Method for encapsulating a semiconductor diode Method for encapsulating a semiconductor diode

1978-06-26

1979-03-27

Vertiz, O. R.

Coating processes

Electrical product produced

Integrated circuit, printed circuit, or circuit board

106 53, C03C 310, H01L 2330

Patent

active

041466551

ABSTRACT:
An improved method for encapsulating a semiconductor diode wherein a semiconductor chip and a pair of leads are surrounded by an insulating glass. The improvement comprising the providing of an alkaline free low temperature encapsulating glass for semiconductors consisting essentially of 11-15 weight percent silica, 7-11 weight percent alumina, 63-68 weight percent lead oxide, 4-10 weight percent lead fluoride and 5-10 weight percent borate.

REFERENCES:
patent: 2393448 (1946-01-01), Armistead
patent: 2643020 (1953-06-01), Dalton
patent: 3303399 (1967-02-01), Hoogendoorn et al.
patent: 3533832 (1970-10-01), De Volder
patent: 3545989 (1970-12-01), Mikoda et al.
patent: 3546013 (1970-12-01), Perri et al.
patent: 3752701 (1973-08-01), Morrissey

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