Coating processes – Coating by vapor – gas – or smoke – Mixture of vapors or gases utilized
Patent
1997-03-04
1998-08-04
Lusignan, Michael
Coating processes
Coating by vapor, gas, or smoke
Mixture of vapors or gases utilized
4272481, 4272551, C23C 1634
Patent
active
057890285
ABSTRACT:
A process and apparatus are described for inhibiting, but not completely eliminating, the deposition of titanium nitride by MOCVD on the end edge of a semiconductor substrate which comprises directing toward such substrate end edge a flow of one or more deposition-inhibiting gases in a direction which substantially opposes the flow of process gases toward the end edges of the substrate. This flow of deposition-inhibiting gases toward the end edges of the substrate reduces the deposition of the titanium nitride at the end edge of the semiconductor substrate either by directing some of the flow of process gases away from such end edge of the substrate, or by locally diluting such process gases in the region of the deposition chamber adjacent the end edge of the substrate, or by some combination of the foregoing.
Such flow of deposition-inhibiting gas or gases may be directed toward the end edge of the substrate by flowing such deposition-inhibiting gas or gases through bores provided in the underlying substrate support pedestal which bores have openings peripherally spaced around the pedestal, adjacent the top of the pedestal, through which such gas or gases then exit beneath the plane of the top surface of the substrate and adjacent the end edge of the substrate.
REFERENCES:
patent: 5230741 (1993-07-01), Van De Ven et al.
patent: 5578532 (1996-11-01), Van De Ven et al.
Raaijmakers, Thin Solid Films, 247 pp. 85-93 (no month), 1994.
Catabay Wilbur G.
Hsia Wei-Jen
Zhao Joe W.
LSI Logic Corporation
Lusignan Michael
Meeks Timothy
Taylor John P.
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