Radiation imagery chemistry: process – composition – or product th – Radiation modifying product or process of making – Radiation mask
Patent
1997-12-22
1999-08-10
Rosasco, S.
Radiation imagery chemistry: process, composition, or product th
Radiation modifying product or process of making
Radiation mask
G03F 900
Patent
active
059357371
ABSTRACT:
During the fabrication of a photolithography mask, double defect-absorbing layers are incorporated to ensure the final mask structure is free of defects. The process begins with a resonant reflector substrate. First and second defect-absorbing layers cover the substrate. The first and second defect-absorbing layers are selected to be repairable if defects form, as well as can be etched selectively relative to each other as well as to the underlying substrate. The first defect-absorbing layer is coated with photoresist. The photoresist is patterned using photolithography. Next, the photoresist pattern is transferred to the first defect-absorbing layer through plasma etching. Any defects arising from the etching step are repaired. Next, the pattern formed in the first defect-absorbing layer is transferred to the second defect-absorbing layer, using the first defect-absorbing layer as a mask. Any defects arising from the etching step are repaired. Next, an absorber layer is deposited into the etched open areas of the first and second defect-absorbing layers. The absorber layer is selected to be substantially absorptive to the wavelength of light to be used on the photolithography mask. The absorber layer is planarized, and then remaining defect-absorbing layers are removed. The remaining mask structure consists of the substrate with a patterned absorber layer.
REFERENCES:
patent: 5272024 (1993-12-01), Lin
patent: 5272744 (1993-12-01), Itou et al.
patent: 5609977 (1997-03-01), Iwamatsu et al.
Intel Corporation
Obinata Naomi
Rosasco S.
LandOfFree
Method for eliminating final euv mask repairs in the reflector r does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for eliminating final euv mask repairs in the reflector r, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for eliminating final euv mask repairs in the reflector r will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1118682