Method for eliminating defects in a photodetector

Details Method for eliminating defects in a photodetector Method for eliminating defects in a photodetector

1984-03-22

1985-09-24

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

156643, 156646, 156657, C25F 312, H01L 21308

Patent

active

045431710

ABSTRACT:
The performance of a photodetector is reduced by the presence of an electrical defect such as a short or a shunt. The invention is a method of improving the performance of this photodetector by preferentially removing a portion of an exposed surface of a detector electrode at the defect site. The preferential etching of the exposed surface is obtained by immersing the photodetector in a chemical etching ambient which has an etching rate for the exposed surface of the electrode which increases with increasing temperature while applying a reverse-bias voltage to the electrodes. The reverse-bias voltage has sufficient magnitude to cause a local increase in temperature of the exposed surface at the defect site.

REFERENCES:
patent: 4064521 (1977-12-01), Carlson
patent: 4094733 (1978-06-01), Gallagher
patent: 4166918 (1979-09-01), Nostrand et al.
patent: 4385971 (1983-05-01), Swartz
patent: 4436581 (1984-03-01), Okudaira et al.
patent: 4464823 (1984-08-01), Izu et al.

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