Method for electrolytic etching of silicon carbide

Details Method for electrolytic etching of silicon carbide Method for electrolytic etching of silicon carbide

1991-10-21

1993-07-13

Valentine, Donald R.

Chemistry: electrical and wave energy

Processes and products

Electrostatic field or electrical discharge

20412975, 2041296, C25F 302

Patent

active

052270343

ABSTRACT:
The invention provides an improved method for polish-etching of silicon carbide, which is arranged in series with an electrolyte and a metallic counter-electrode in a current circuit with an adjustable direct voltage, wherein an alkaline solution is used as the electrolyte, preferably in a high concentration and at great current density. In this way, uniform removal of the material and an even surface are obtained.

REFERENCES:
patent: 3042593 (1962-07-01), Michlin
patent: 4351894 (1982-09-01), Yonezawa et al.
patent: 4995953 (1991-02-01), Yee
"The Etching of Silicon Carbide" vol. 4, pp. S199-S120 (1969).
"Atzpraxis fur Halbleiter" (Etching Practice for Semiconductors) pp. 138-142, Karl Hanser Verlag (1967).

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