Method for electrochemical etching of semiconductor material...

Details Method for electrochemical etching of semiconductor material... Method for electrochemical etching of semiconductor material...

2005-05-16

2009-02-24

Tran, Binh X (Department: 1792)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S042000, C438S093000, C205S655000, C205S656000, C204S242000

Reexamination Certificate

active

07494936

ABSTRACT:
A method for electrochemical etching of a semiconductor material using positive potential dissolution (PPD) in solutions that do not contain hydrofluoric acid (HF-free solutions). The method includes immersing an as-cut semiconductor material in an etching solution, and positive biasing at atypically highly positive (anodic) potentials, thereby significantly increasing the value of the anodic current density (measured as A/cm2) of the semiconductor material. The application of positive biasing at atypically highly positive (anodic) potentials, is combined with specifically controlling and directing illumination on the semiconductor material surface contacted and wetted by the etching solution. This is done for a necessary and sufficient period of time to enable a positive synergistic effect on the rate and extent of etching of the semiconductor material therefrom.

REFERENCES:
patent: 5445718 (1995-08-01), Wang
patent: 6521118 (2003-02-01), Starosvetsky et al.
patent: 2005/0148198 (2005-07-01), Ein-Eli et al.
patent: 40 36 895 (1992-05-01), None
R. A. Wind et al., Orientation-resolved chemical kinetics: using microfabrication to unravel the complicated chemistry of KOH/Si etching, J. Phys. Chern B.106(7), 1557-1569 (2002).
I. Zubel and M. Kramkowska, The effect of isopropyl alcohol on etching rate and roughness of (1 0 0) Si surface etched in KOH and TMAH solutions, Sensors and Actuators A. Physical, A93(2). 138-147 (2001).

Affiliated with

Also associated with

Rating

Method for electrochemical etching of semiconductor material... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for electrochemical etching of semiconductor material..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for electrochemical etching of semiconductor material... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4057911