Method for electro-luminescent display fabrication

Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Including integrally formed optical element

Reexamination Certificate

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Reexamination Certificate

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10888692

ABSTRACT:
The present invention discloses a method for fabricating a pixel area of an electro-luminescent display device. At least one buffer layer is formed on a substrate. An etch stop layer is formed on the buffer layer. At least one intermediate layer is formed over the etch stop layer. The intermediate layer is etched to expose the etch stop layer, which has an etch rate substantially selective against that of the intermediate layer. The etch stop layer is etched to expose the buffer layer, which has an etch rate substantially selective against that of the etch stop layer, thereby improving an level uniformity of the exposed buffer layer.

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