Method for electrically characterizing the insulator in SOI devi

Details Method for electrically characterizing the insulator in SOI devi Method for electrically characterizing the insulator in SOI devi

1994-12-06

1996-05-21

Nguyen, Vinh P.

Electricity: measuring and testing

Fault detecting in electric circuits and of electric components

Of individual circuit component or element

324765, G01R 1908

Patent

active

055193366

ABSTRACT:
A rapid method for determining electrical characteristics of SOI wafers whereby the silicon substrate acts as a gate and tungsten probes make a source and drain connection at the top silicon surface to form a point contact transistor. Drain current is measured as a function of gate voltage as gate voltage is swept from negative to positive values. The subthreshold voltage current characteristic exhibits a minimum drain current occurring close to zero gate voltage. The tungsten probe point contacts apparently are responding to both electron and hole conduction or simply intrinsic CMOS behavior. Using current voltage characteristics, estimates may be made of interface state density and oxide charge density. Analysis of the gate voltage shift for minimum drain current allows determination of threshold voltage shift due to radiation.

REFERENCES:
patent: 4520448 (1985-05-01), Treminta
patent: 4827212 (1989-05-01), Kamieniecki
patent: 4896108 (1990-01-01), Lynch et al.
patent: 4920399 (1990-04-01), Hall
patent: 5032786 (1991-07-01), Kimura
patent: 5103277 (1992-04-01), Caviglia et al.
patent: 5164805 (1992-11-01), Lee
patent: 5308788 (1994-05-01), Fitch et al.
Sorin Cristoloveanu & Stephen Williams, "Point-Contact Psuedo MOSFET for In-Situ Characterization of As-Grown Silicon-on-Insulator Wafers," Feb. 1992, pp. 102-104.
Lin et al; "Fast Turn Characterization of Simox/Wafers"; 1990 IEEE SOS/SOI technology Conference, Oct. 2-4, 1990.

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