Method for dry-etching using gaseous bismuth halide compound

Details Method for dry-etching using gaseous bismuth halide compound Method for dry-etching using gaseous bismuth halide compound

1996-05-30

1999-02-09

Codd, Bernard P.

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438735, 216 73, 216 75, 216 79, B44C 122, C23F 112

Patent

active

058694005

ABSTRACT:
The present invention provides a method for dry-etching a solid surface with a gaseous bismuth halide compound, which permits achivement of a simple and perfect dry-process for manufacturing of electoric devices, quantum devices etc., giving a high reproducibility.

REFERENCES:
Jpn. J. Appl. Phys., vol. 32 (1993), pp. L204-L206, Part 2, No. 2A, Feb. 1, 1993.
Jpn. J. Appl. Phys., vol. 33 (1994), pp. 2307-2310, Part 1, No. 4B, Apr. 1994.

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