Method for dry etching sidewall polymer

Details Method for dry etching sidewall polymer Method for dry etching sidewall polymer

1997-02-19

1998-12-22

Breneman, Bruce

Cleaning and liquid contact with solids

Processes

Including application of electrical radiant or wave energy...

438696, 438725, 438723, 438734, 438740, H01L 21302

Patent

active

058513027

ABSTRACT:
A method of plasma etching photoresist and sidewall polymer with an etch gas mixture comprising CF.sub.4 and H.sub.2 O demonstrating very aggressive ashrate of photoresist but maintains an exceptionally low etch rate for titanium nitride and other metals is provided. The very low TiN etch rate permits the inventive method to effectively breakdown sidewall polymer without removing any significant amount of these metals. The invention is particularly suited for stripping sidewall polymer from etched via holes and from etched metal lines.

REFERENCES:
patent: 4123841 (1978-11-01), Yano et al.
patent: 4514254 (1985-04-01), Klepner
patent: 4670091 (1987-06-01), Thomas et al.
patent: 4897153 (1990-01-01), Cole et al.
patent: 5077598 (1991-12-01), Bartelink
patent: 5348619 (1994-09-01), Bohannon et al.
patent: 5358602 (1994-10-01), Sutcliffe et al.
patent: 5382316 (1995-01-01), Hills et al.
patent: 5451291 (1995-09-01), Park et al.
patent: 5485304 (1996-01-01), Kaeriyama
patent: 5497262 (1996-03-01), Kaeriyama
patent: 5512507 (1996-04-01), Yang et al.
patent: 5521104 (1996-05-01), Walker
patent: 5526951 (1996-06-01), Bailey et al.
patent: 5573971 (1996-11-01), Cleeves
patent: 5578163 (1996-11-01), Yachi
patent: 5661083 (1997-08-01), Chen et al.

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