Method for dry-etching of silicon substrate

Details Method for dry-etching of silicon substrate Method for dry-etching of silicon substrate

1997-08-11

1999-07-27

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

216 37, 216 67, 438695, 438735, 438738, 438700, H01L 2100

Patent

active

059289651

ABSTRACT:
A method for dry-etching a silicon substrate by the use of a mask selectively formed on the silicon substrate, in which method a reaction product of dry etching is deposited, during dry etching, in a uniform thickness on the side wall of each groove formed in the silicon substrate by dry etching. In the inventive method, etching is conducted by using, as an etching gas, a mixed gas containing Cl.sub.2, HBr, O.sub.2 and He or a mixed gas contained Cl.sub.2, HBr and CO, under the conditions of an etching pressure of 0.02-0.05 Torr, a RF power density of 1.01-1.64 W/cm.sup.2 and a substrate temperature of 40-50.degree. C. With this method, the tapered sectional shape of each groove formed in the silicon substrate can be controlled easily and etching can be conducted at high reproducibility.

REFERENCES:
patent: 4450042 (1984-05-01), Purdes
patent: 4490209 (1984-12-01), Hartman
patent: 4726879 (1988-02-01), Bondur et al.

Affiliated with

Also associated with

Rating

Method for dry-etching of silicon substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for dry-etching of silicon substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for dry-etching of silicon substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-878262