Method for dry etching of post-processing interconnection metal

Details Method for dry etching of post-processing interconnection metal Method for dry etching of post-processing interconnection metal

1995-01-31

1996-05-28

Schilling, Richard L.

Fishing, trapping, and vermin destroying

1566341, 1566431, 216 13, 216 14, 216 20, 437228, 437238, 437241, 2503381, C03C 1500, G01J 100, C23F 100, B44C 122

Patent

active

055211046

ABSTRACT:
This is a system and method of fabricating hybrid integrated circuits (IC). The method may comprise: forming internal IC structures on a substrate; forming IC interlevel insulation on top of the internal IC structures; forming IC top level metal connections on top of the IC interlevel insulation; depositing a protective overcoat over the IC top level metal and the IC interlevel insulation; depositing a dry etch protective layer over the protective overcoat; and dry etching the etch protective layer and the protective overcoat to expose portions of the IC top level metal. The deposition of the protective overcoat may include depositing silicon dioxide or silicon nitride. In addition, the deposition of the dry etch protective layer may include depositing a photosensitive polymide layer. Furthermore, the dry etching may include photolithography. After the etching of the vias, the method may include: forming thermal isolation mesas on the substrate; forming local interconnects over the thermal isolation mesas and the substrate; and connecting uncooled infrared detectors to the internal IC structures through the local interconnects.

REFERENCES:
patent: 5466332 (1995-11-01), Owen

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