Method for dry etching fluid feed slots in a silicon substrate

Details Method for dry etching fluid feed slots in a silicon substrate Method for dry etching fluid feed slots in a silicon substrate

2007-09-18

2007-09-18

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S021000, C216S002000, C216S027000, C216S058000

Reexamination Certificate

active

11170895

ABSTRACT:
A method of micro-machining a semiconductor substrate to form one or more through slots therein. The semiconductor substrate has a device side and a fluid side opposite the device side. The method includes diffusing a p-type doping material into the device side of the semiconductor substrate in one or more through slot locations to be etched through a thickness of the substrate. The semiconductor substrate is then etched with a dry etch process from the device side of the substrate to the fluid side of the substrate so that one or more through slots having a reentrant profile are formed in the substrate.

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