Method for dry-etching a polycide film

Details Method for dry-etching a polycide film Method for dry-etching a polycide film

1997-12-12

1999-11-30

Brunsman, David

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438721, 438737, 438738, H01L 21467

Patent

active

059942347

ABSTRACT:
A method for dry-etching a polycide film composed of a double layer film of a polysilicon film provided on a semiconductor substrate and a metal silicide film provided on said polysilicon film according to the present invention comprises the steps of: a first etching step for etching said silicide film with a first etching gas containing no fluorine-based gasses using a photoresist film as a mask, and a second etching step for etching said polysilicon film with a second etching gas not containing chloride gas and fluorine gas using said patterned metal silicide film and said photoresist film remaining on said metal silicide film after said first etching step as a mask.

REFERENCES:
patent: 4680086 (1987-07-01), Thomas et al.
patent: 5160407 (1992-11-01), Latchford et al.
patent: 5188980 (1993-02-01), Lai
patent: 5338398 (1994-08-01), Szweijkowski et al.

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