Method for driving solid-state imaging device

Details Method for driving solid-state imaging device Method for driving solid-state imaging device

1999-07-28

2000-10-31

Chaudhari, Chandra

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

438144, H01L 21339

Patent

active

061401471

ABSTRACT:
A method for driving a solid-state imaging device such as a CCD (Charge Coupled Device) which facilitates control of a blooming suppressing voltage and can reduce a voltage required for shuttering. The solid-state imaging device to be driven typically comprises a first one-conductive type region, a second one-conductive type region having a one-conductive type impurity concentration lower than that of the first one-conductive type region and provided on the first one-conductive type region in contact with the first one-conductive type region, an opposite-conductive type region in contact with the second one-conductive type region, and a one-conductive type layer forming a p-n junction together with the opposite-conductive type region and constituting a photodiode portion together with the opposite-conductive type region. When the solid-state imaging device is driven, a blooming suppressing voltage of a reverse bias is applied between the opposite-conductive type region and the first one-conductive type region so as to form a depletion layer edge within the second one-conductive type region.

REFERENCES:
patent: 4900688 (1990-02-01), Halvis
patent: 5118631 (1992-06-01), Dyck et al.
patent: 5516714 (1996-05-01), Kim
patent: 5877520 (1999-03-01), Hynecek

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