Method for driving semiconductor device having capacitive...

Details Method for driving semiconductor device having capacitive... Method for driving semiconductor device having capacitive...

2011-08-30

2011-08-30

Vu, Ngoc-Yen T (Department: 2622)

Television

Camera, system and detail

Solid-state image sensor

C348S294000, C348S317000

Reexamination Certificate

active

08009218

ABSTRACT:
When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.

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