Method for driving semiconductor device having capacitive...

Television – Camera – system and detail – Solid-state image sensor

Reexamination Certificate

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Details

C348S298000, C348S320000, C348S322000

Reexamination Certificate

active

07956919

ABSTRACT:
When a signal is read from a CCD solid-state image pickup element, the CCD solid-state image pickup element is driven with at least two driving voltages so that high-speed reading is performed with generation of noise due to interference between the driving voltages reduced. The CCD solid-state image includes a charge storage section between a vertical transfer register and a horizontal transfer register. By performing the transfer of charge in the direction of columns during an effective transfer period of the transfer in the direction of rows, signal charge of one row generated by a light receiving sensor is transferred to the charge storage section, and by performing the transfer outside the effective transfer period in the transfer in the direction of the row, the signal charge of one row transferred to the charge storage section is transferred to the horizontal transfer register.

REFERENCES:
patent: 4241262 (1980-12-01), Audaire et al.
patent: 6400404 (2002-06-01), Hirota et al.
patent: 6559889 (2003-05-01), Tanaka et al.
patent: 7586526 (2009-09-01), Kurokawa et al.
patent: 7817200 (2010-10-01), Hirota
patent: 2007/0165128 (2007-07-01), Kato
patent: 2008/0179634 (2008-07-01), Takiguchi et al.
patent: 01-077380 (1989-03-01), None
patent: 05-291310 (1993-11-01), None
patent: 10-013742 (1998-01-01), None
patent: 10-290003 (1998-10-01), None
patent: 2000-138943 (2000-05-01), None
patent: 2001-103380 (2001-04-01), None
patent: 2004-282725 (2004-10-01), None
patent: 2004-328314 (2004-11-01), None
patent: 2005-269060 (2005-09-01), None
patent: WO-03/090374 (2003-10-01), None
Japanese Office Action issued Oct. 13, 2009 for corresponding Japanese Application No. 2005-286061.
Japanese Office Action issued Nov. 4, 2009 for corresponding Japanese Application 2006-038448.

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