Method for driving an insulated gate semiconductor device

Details Method for driving an insulated gate semiconductor device Method for driving an insulated gate semiconductor device

1989-09-11

1991-02-19

Argenbright, Tony M.

Internal-combustion engines

High tension ignition system

Power supply, ignition coil primary, and interrupter element...

123149R, 307570, 307584, F02P 108

Patent

active

049933965

ABSTRACT:
The present invention relates to a method for biasing and making conductive an insulated gate semiconductor device having main electrodes at both surfaces of a semiconductor substrate and a gate electrode at one surface. Charges are accumulated between the gate electrode and the main electrode at the opposite surface while a voltage is applied across the electrodes storing a charge. The element is made conductive by discharging the accumulated charges when a voltage is applied in the conductive direction to such semiconductor element. The device can be used to drive the primary side of an ignition system in an internal combustion engine.

REFERENCES:
patent: 4342304 (1982-08-01), Watanabe
patent: 4501256 (1985-02-01), Dykstra

Affiliated with

Also associated with

Rating

Method for driving an insulated gate semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for driving an insulated gate semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for driving an insulated gate semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1135230